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Nature of the band gap of halide perovskites <em> ABX</em><sub>3</sub> (<em> A</em> = CH<sub>3</sub>NH<sub>3</sub>, Cs; <em> B</em> = Sn, Pb; <em> X</em> = Cl, Br, I): First-principles calculations<xref ref-type="fn" rid="cpb150734fn1">*</xref>
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Materials | Free Full-Text | The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors
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Nature of the band gap of halide perovskites <em> ABX</em><sub>3</sub> (<em> A</em> = CH<sub>3</sub>NH<sub>3</sub>, Cs; <em> B</em> = Sn, Pb; <em> X</em> = Cl, Br, I): First-principles calculations<xref ref-type="fn" rid="cpb150734fn1">*</xref>
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Effects of different exchanging ions on the band structure and photocatalytic activity of defect pyrochlore oxide: a case study on KNbTeO6 - Catalysis Science & Technology (RSC Publishing)
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Materials | Free Full-Text | The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors
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